Silicon Surface Passivation by Al2O3: Recombination Parameters and Inversion Layer Solar Cells
نویسندگان
چکیده
منابع مشابه
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
The reduction in electronic recombination losses by the passivation of silicon surfaces is a critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) emerged as a novel solution for the passivation of pand n-type crystalline Si (c-Si) surfaces. Today, high efficiencies have been realized by the implementation of ul...
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ژورنال
عنوان ژورنال: Energy Procedia
سال: 2012
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2012.07.070